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Part 3 · Course

EE486 SOLID STATE ELECTRONICS

Electrical Engineering and Computer Science · 5 versions

Offerings are listed from 2027-1 Fall through 2031-1 Fall.

EE486 SOLID STATE ELECTRONICS

  • 3.0 credit hours
  • (BS=0.0, ET=3.0, MA=0.0)
  • Version 2025-2
  • In effect
Scope
The course covers device physics, operating principles and applications of diodes, bipolar junction transistors, and field effect transistors (FET). It begins with basic properties of crystalline solids, energy diagrams, and thermal physics. P-N junction diodes are the first semiconductor device explored with further study into metal oxide semiconductor (MOS) capacitor and MOSFET based devices. The course also covers the layout of complementary metal oxide semiconductor (CMOS) gates on an integrated circuit chip. Throughout the course, a number of general electronic devices are introduced including digital memories, charge coupled devices, solar cells, photodiodes, light emitting diodes and lasers. The laboratories are focused on P-N junction device parameter extraction, CMOS digital circuit characterizations, and the application of optoelectronic devices.
Lessons
36 @ 55 min (2.500 Att/wk)
Labs
4 @ 55 min
Special requirements
None
Prerequisites
one of
EE486 version 2025-2 offerings
Term Sections Section size Capacity Enrolled Wait list Seats Closed Details
2027-2 Spring 2 18 36 32 0 4 No Hours for 2027-2 Spring
2028-2 Spring 2 18 36 29 0 7 No Hours for 2028-2 Spring
2029-2 Spring 1 18 18 5 0 13 No Hours for 2029-2 Spring
2030-2 Spring 1 18 18 0 0 18 No Hours for 2030-2 Spring